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| CHA5293a 17-24GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5293a is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vd1 Vd2 Vg3 Vd3 Vg1,2 Vd2 25 20 15 10 5 0 -5 -10 -15 -20 12 14 16 18 20 Vg3 Vd3 Main Features Performances : 17-24GHz 30dBm output power @ 1dB comp. gain 17 dB 1dB gain DC power consumption, 800mA @ 6V Chip size : 4.01 x 2.52 x 0.05 mm Gain & RLoss (dB) S22 S11 22 24 26 28 Frequency (GHz) Typical on jig Measurements Main Characteristics Tamb. = 25C Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min 17 16 29 Typ 17 30 800 Max 24 Unit GHz dB dBm mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA52932123 -03-May-02 1/7 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5293a Electrical Characteristics Tamb = +25C, Vd = 6V Id #800mA Symbol Fop G G Is P1dB P03 IP3 PAE VSWRin 17-24GHz High Power Amplifier Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation Pulsed output power at 1dB compression (1) Output power at 3dB gain compression (1) 3 order intercept point (2) Power added efficiency at 1dB comp. Input VSWR (2) rd Min 17 16 Typ Max 24 Unit GHz dB dB dB dBm dBm dBm % 17 1 50 29 30 32 42 20 3:1 3:1 155 800 1000 VSWRout Output VSWR (2) Tj Id Junction temperature for 80C backside Bias current @ small signal C mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vd Id Vg Ig Vgd Pin Tch Ta Tstg Parameter Maximum drain bias voltage with Pin max=12dBm Maximum drain bias current Gate bias voltage Gate bias current Minimum negative gate drain voltage ( Vg - Vd) Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values 6.25 1450 -2.5 to +0.4 -5 to +5 -8 15 175 -40 to +80 -55 to +125 Unit V mA V mA V dBm C C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA52932123 -03-May-02 2/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-24GHz High Power Amplifier Typical on Jig Measurements ( including 1dB loss for the gain & 0.5dBm for the power) Bias conditions: Vd=6V, Vg tuned for Id = 800mA 25 20 15 CHA5293a Gain & RLoss (dB) 10 5 0 -5 -10 -15 -20 12 14 16 18 20 22 24 26 28 S22 S11 Frequency (GHz) Linear Gain & Return Losses versus frequency 20 19 18 17 Gain (dB) 16 15 14 13 12 11 10 14 16 18 20 22 24 26 28 30 32 Output Power (dBm) 16 GHz 22 GHz 18 GHz 24GHz 20 GHz Serie2 1100 1000 1800 1700 1600 1500 1400 1300 1200 Drain current (mA) @ 20GHz 900 800 Output power versus frequency & Drain current @ 20GHz Ref. : DSCHA52932123 -03-May-02 3/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5293a 74 70 66 62 58 54 50 46 42 38 34 30 5 6 7 8 17-24GHz High Power Amplifier F=18GHz F=10MHz C/ I3 (dBc) IP3 (dBm) 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power(dBm) C/I3 & IP3 versus total output power @ 18GHz 78 74 70 66 62 58 54 50 46 42 38 34 30 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power(dBm) F=20GHz F=10MHz C/ I3 (dBc) IP3 (dBm) C/I3 & IP3 versus total output power @ 20GHz Ref. : DSCHA52932123 -03-May-02 4/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-24GHz High Power Amplifier 78 74 70 66 62 58 54 50 46 42 38 34 30 5 6 7 8 CHA5293a F=21.5GHz F=10MHz C/ I3 (dBc) IP3 (dBm) 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power(dBm) C/I3 & IP3 versus total output power @ 21.5GHz 74 70 66 62 58 54 50 46 42 38 34 30 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Output Power(dBm) F=23.5GHz F=10MHz C/ I3 (dBc) IP3 (dBm) C/I3 & IP3 versus total output power @ 23.5GHz Ref. : DSCHA52932123 -03-May-02 5/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5293a 17-24GHz High Power Amplifier Chip Assembly and Mechanical Data To Vd1,Vd2 DC Drain supply feed To Vd3 DC Drain supply feed To Vg1,2,3 DC Gate supply feed Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 50m. All dimensions are in micrometers ) Ref. : DSCHA52932123 -03-May-02 6/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-24GHz High Power Amplifier CHA5293a Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage Due to 50m thickness, specific care is requested for the handling and assembly. Ordering Information Chip form : CHA5293a-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA52932123 -03-May-02 7/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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